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Stark effect at dislocations in silicon for modulation of a 1.5 μm light emitter
- Source :
- SPIE Proceedings.
- Publication Year :
- 2008
- Publisher :
- SPIE, 2008.
-
Abstract
- A MOS-LED and a p-n LED emitting based on the dislocation-related luminescence (DRL) at 1.5 micron were already demonstrated by the authors. Here we report recent observation of the Stark effect for the DRL in Si. Namely, a red/blue-shift of the DRL peak positions was observed in electro- and photo-luminescence when the electric field in the pn-LED was increased/lowered. Fitting the experimental data yields a strong characteristic coefficient of 0.0186 meV/(kV/cm)2. This effect may allow realization of a novel Si-based emitter and modulator combined in a single device.
Details
- ISSN :
- 0277786X
- Database :
- OpenAIRE
- Journal :
- SPIE Proceedings
- Accession number :
- edsair.doi...........4674267fafb0062bcf8f17b00dc88e02