K band very low noise DRO

Authors :: A. Madjar
D. Elad
Source :: Eighteenth Convention of Electrical and Electronics Engineers in Israel.
Publication Year :: 2002
Publisher :: IEEE, 2002.
Abstract: In this paper we present the design and performance of a K band DRO (Dielectric Resonator Oscillator). The design incorporates NE71000 MESFET and an open source oscillator topology, which we show to be superior in terms of bandwidth and noise. The same circuit can be used (with different resonators) in the frequency range 21-25 GHz. The output power is 10 dbm, frequency stability 4 ppm/degree C and phase noise -88 dbc/Hz@10 kHz (several db better compared to previously published DROs at this frequency range).

Subjects :: Physics
Resonator
business.industry
K band
Bandwidth (signal processing)
Phase noise
Electrical engineering
dBc
Optoelectronics
Topology (electrical circuits)
MESFET
Dielectric
business

Database :: OpenAIRE
Journal :: Eighteenth Convention of Electrical and Electronics Engineers in Israel
Accession number :: edsair.doi...........466fc5b514ff079601d7add43881247a
Full Text :: https://doi.org/10.1109/eeis.1995.514165