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Identification of theVAl-ONdefect complex in AlN single crystals
- Source :
- Physical Review B. 84
- Publication Year :
- 2011
- Publisher :
- American Physical Society (APS), 2011.
-
Abstract
- In this Rapid Communication, we report positron annihilation results on in-grown and proton irradiation-induced vacancies and their decoration in aluminium nitride (AlN) single crystals. By combining positron lifetime and coincidence Doppler measurements with ab initio calculations, we identify in-grown ${V}_{\mathrm{Al}}\ensuremath{-}{\mathrm{O}}_{\mathrm{N}}$ complexes in the concentration range ${10}^{18}$ cm${}^{\ensuremath{-}3}$ as the dominant form of ${V}_{\mathrm{Al}}$ in the AlN single crystals, while isolated ${V}_{\mathrm{Al}}$ were introduced by irradiation. Further, we identify the UV absorption feature at around 360 nm that involves ${V}_{\mathrm{Al}}$.
- Subjects :
- 010302 applied physics
Materials science
Proton
Aluminium nitride
Uv absorption
Doppler measurements
02 engineering and technology
021001 nanoscience & nanotechnology
Condensed Matter Physics
01 natural sciences
Electronic, Optical and Magnetic Materials
Condensed Matter::Materials Science
Crystallography
chemistry.chemical_compound
chemistry
Ab initio quantum chemistry methods
Vacancy defect
0103 physical sciences
Absorption (logic)
0210 nano-technology
Positron annihilation
Subjects
Details
- ISSN :
- 1550235X and 10980121
- Volume :
- 84
- Database :
- OpenAIRE
- Journal :
- Physical Review B
- Accession number :
- edsair.doi...........45bb3f10fb228b8042d5fdb930762371