Growth of GaN on Graphite Substrate as Growth on Graphene using the Density Functional Theory

Using the pulsed deposition technique, the growth of GaN on graphite substrate is possible. Because of the two‐dimensionality of graphite, the strain for the lattice mismatch due to the growth of GaN is absorbed by the topmost layer of graphite. We confirm that the electronic and the atomic structure for the interface of the grown GaN on graphite is almost similar to the interface of GaN on a single graphene layer using the density functional theory.