In-Memory Hamming Distance Calculation Based on One- Transistor-Two-Memristor (1T2M) Structure

Hamming Distance (HD) plays an important role in many fields such as information theory, coding and cryptography. In this work, an efficient in-memory HD calculation method in a one-transistor-two-memristor (1 T2M) array has been designed. HD calculation is based on the implementation of XOR logic, which only costs three steps and the results could be stored in-situ. HD value is measured by a Read current, which is obtained by applying the Read voltage on top electrodes of all memristors. The influence of LRS device-to-device variation on the calculation results is also discussed.