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Thermal nitridation passivation dependent band offset and electrical properties of AlOxNy/GaAs gate stacks
- Source :
- Applied Physics Letters. 95:112905
- Publication Year :
- 2009
- Publisher :
- AIP Publishing, 2009.
-
Abstract
- Fermi level pinning attributed to oxides at the GaAs/high-k interface is a major obstacle to develop GaAs-based metal-oxide-semiconductor devices with high performance. In this letter, thermal nitridation treatment of GaAs surface prior to the high-k deposition is proposed to solve the issue of interface pinning. Results have confirmed that nitridation passivation effectively suppresses the oxides formation and leads to a shift in the Fermi level toward the conduction band minimum on the GaAs surface, which increases the conduction band offset at the GaAs/AlOxNy interface, followed by a saturated accumulation capacitance with reduced gate leakage current.
- Subjects :
- Materials science
Physics and Astronomy (miscellaneous)
Passivation
business.industry
Fermi level
Gate stack
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Capacitance
Band offset
Gallium arsenide
Condensed Matter::Materials Science
symbols.namesake
chemistry.chemical_compound
Thermal nitridation
chemistry
symbols
Optoelectronics
business
Conduction band
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 95
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........44f9c63a967b4d583e366c395ae9cb6b
- Full Text :
- https://doi.org/10.1063/1.3229922