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Thermal nitridation passivation dependent band offset and electrical properties of AlOxNy/GaAs gate stacks

Authors :
Guo-Zhong He
M. Liu
Li De Zhang
Source :
Applied Physics Letters. 95:112905
Publication Year :
2009
Publisher :
AIP Publishing, 2009.

Abstract

Fermi level pinning attributed to oxides at the GaAs/high-k interface is a major obstacle to develop GaAs-based metal-oxide-semiconductor devices with high performance. In this letter, thermal nitridation treatment of GaAs surface prior to the high-k deposition is proposed to solve the issue of interface pinning. Results have confirmed that nitridation passivation effectively suppresses the oxides formation and leads to a shift in the Fermi level toward the conduction band minimum on the GaAs surface, which increases the conduction band offset at the GaAs/AlOxNy interface, followed by a saturated accumulation capacitance with reduced gate leakage current.

Details

ISSN :
10773118 and 00036951
Volume :
95
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........44f9c63a967b4d583e366c395ae9cb6b
Full Text :
https://doi.org/10.1063/1.3229922