Fabrication and characterization of p-type boron doped Cu2O thin film and Cu2O:B/n-Si heterojunction

In this study, the doping of boron in cuprous oxide as p-type material and its application for optoelectronic device is presented. Thin films are fabricated using metallic targets of Copper and Boron by rf magnetron co-sputtering in the Ar and O2 ambient. The X-ray diffraction spectra of the doped samples matched with cubic Cu2O phase, with no significant peak shift compared to intrinsic Cu2O film. Raman analysis confirmed the Cu2O phase in both doped and un-doped films. For doped thin films optical transparency was enhanced compared to intrinsic cuprous oxide. Band gap of doped and undoped Cu2O were 2.67 eV and 2.47 eV respectively. Heterojunction is fabricated with n-Si and the electrical properties were studied.