Metal Migration Induced Breakdown from Gate Contact in Bulk FinFET Devices

Authors :: Chaolun Wang
Yazhen Xie
Kuei-Shu Chang-Liao
Weisong Yu
Chihang Tsai
Luoyong Li
Yuchong Qiao
Zhiwei Liu
Xin Yang
Yongren Wu
Yihong Qing
Xing Wu
Source :: 2021 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
Publication Year :: 2021
Publisher :: IEEE, 2021.

Subjects :: Metal
Materials science
business.industry
visual_art
visual_art.visual_art_medium
Optoelectronics
business

Database :: OpenAIRE
Journal :: 2021 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
Accession number :: edsair.doi...........44882491cf2251aa74d0b63639181217

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