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A 32Gb/s-NRZ, 15GBaud/s-PAM4 DFB laser driver with active back-termination in 65nm CMOS
- Source :
- 2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC).
- Publication Year :
- 2017
- Publisher :
- IEEE, 2017.
-
Abstract
- A 32Gb/s-NRZ, 15GBaud/s-PAM4 configurable DFB Laser Diode Driver (LDD) is presented in standard 65nm CMOS. The driver employs a balanced-input, single-ended-output topology to deliver large current output, and integrates a tunable pre-emphasis to extend the bandwidth. An on-chip active back-termination (ABT) is proposed which absorbs loading reflections without sacrificing the effective modulation current. Directly wire-bonded to a DFB laser chip, the measurement results show 25.78Gb/s NRZ optical eye-diagram with 4dB Extinction Ratio (ER) and a 19.3% eye-mask margin referred to the 100G specification. The LDD delivers 60mA bias and 60mApp modulation current, consuming only 550mW power consumption.
- Subjects :
- Engineering
Distributed feedback laser
Extinction ratio
business.industry
020208 electrical & electronic engineering
Bandwidth (signal processing)
02 engineering and technology
Chip
CMOS
Power consumption
0202 electrical engineering, electronic engineering, information engineering
Electronic engineering
business
Electrical impedance
Diode
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- 2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)
- Accession number :
- edsair.doi...........446c0848702711eb4c4a6fe795e17f9c