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A 32Gb/s-NRZ, 15GBaud/s-PAM4 DFB laser driver with active back-termination in 65nm CMOS

Authors :
Jiangbing Du
Huanlin Zhang
Rui Bai
Miaofeng Li
Jun Zheng
Yi Wang
Patrick Chiang
Bozhi Yin
Jingbo Shi
Nan Qi
Daigao Chen
Zhiyong Li
Zuyuan He
Fred Chang
Xi Xiao
Source :
2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC).
Publication Year :
2017
Publisher :
IEEE, 2017.

Abstract

A 32Gb/s-NRZ, 15GBaud/s-PAM4 configurable DFB Laser Diode Driver (LDD) is presented in standard 65nm CMOS. The driver employs a balanced-input, single-ended-output topology to deliver large current output, and integrates a tunable pre-emphasis to extend the bandwidth. An on-chip active back-termination (ABT) is proposed which absorbs loading reflections without sacrificing the effective modulation current. Directly wire-bonded to a DFB laser chip, the measurement results show 25.78Gb/s NRZ optical eye-diagram with 4dB Extinction Ratio (ER) and a 19.3% eye-mask margin referred to the 100G specification. The LDD delivers 60mA bias and 60mApp modulation current, consuming only 550mW power consumption.

Details

Database :
OpenAIRE
Journal :
2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)
Accession number :
edsair.doi...........446c0848702711eb4c4a6fe795e17f9c