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High Temperature Operation of Al0.45Ga0.55N/Al0.30Ga0.70N High Electron Mobility Transistors

Authors :
Andrew M. Armstrong
T. R. Fortune
Andrew A. Allerman
Brianna Klein
Erica A. Douglas
Albert G. Baca
Carlos Anthony Sanchez
Source :
ECS Journal of Solid State Science and Technology. 6:S3010-S3013
Publication Year :
2017
Publisher :
The Electrochemical Society, 2017.

Details

ISSN :
21628777 and 21628769
Volume :
6
Database :
OpenAIRE
Journal :
ECS Journal of Solid State Science and Technology
Accession number :
edsair.doi...........4459421c02c0a2ccafede80ef05320b6