The epitaxial ZrO2 on silicon as alternative gate dielectric: film growth, characterization and electronic structure calculations

The epitaxial ZrO2 on silicon as alternative gate dielectric, including film growth, interface characterization and electronic structure calculations, have been studied using a combination of characterization tools. The films grown by pulsed laser deposition have high-quality microstructure and electrical properties. The atomic structure and band alignment at the ZrO2/Si interfaces have been determined by high-resolution transmission electron microscopy and X-ray photoelectron spectroscopy. Relative stabilities and electronic properties of interface structure have been discussed and compared from the view of experimental and calculated results.