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Electroluminescence at a wavelength of 1.5 μm in Si:Er/Si diode structures doped with Al, Ga, and B acceptors
- Source :
- Semiconductors. 44:1597-1599
- Publication Year :
- 2010
- Publisher :
- Pleiades Publishing Ltd, 2010.
-
Abstract
- Si:Er layers in diode structures were doped with Al, Ga, or B during growth by sublimation molecular-beam epitaxy. As a result, a sharp increase in the electroluminescence intensity at a wavelength of 1.5 μm was observed in diodes with thick bases (as large as 0.8 μm).
- Subjects :
- Materials science
business.industry
Doping
Electroluminescence
Condensed Matter Physics
Epitaxy
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
Depletion region
Optoelectronics
Sublimation (phase transition)
business
Luminescence
Diode
Molecular beam epitaxy
Subjects
Details
- ISSN :
- 10906479 and 10637826
- Volume :
- 44
- Database :
- OpenAIRE
- Journal :
- Semiconductors
- Accession number :
- edsair.doi...........442960b6158538d9dfdf3ec48cb131de
- Full Text :
- https://doi.org/10.1134/s1063782610120110