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Advanced Coherent X-ray Diffraction and Electron Microscopy of Individual InP Nanocrystals on Si Nanotips for III-V-on- Si Electronics and Optoelectronics

Authors :
Steven J. Leake
Peter Zaumseil
Zuo-Guang Ye
Marie-Ingrid Richard
Felix Kießling
Thomas Schroeder
Tobias U. Schülli
Tore Niermann
William Ted Masselink
Giovanni Capellini
Markus Andreas Schubert
Fariba Hatami
Michael Lehmann
Gang Niu
Jerome Carnis
Wei Ren
Oliver Skibitzki
Emad H. Hussein
Source :
Physical Review Applied. 11
Publication Year :
2019
Publisher :
American Physical Society (APS), 2019.

Abstract

Let's talk about your flaws\dots{} The authors present nondestructive examination of the crystallographic properties (including crystal size, facet shape, strain, and defects) of lone InP nanocrystals (NC) grown on Si nanostructures. This sort of three-dimensional structured imaging is of great significance in evaluating the quality of the active nanomaterials in fully processed nanoelectronic and nano-optoelectronic devices, even in an $o\phantom{\rule{0}{0ex}}p\phantom{\rule{0}{0ex}}e\phantom{\rule{0}{0ex}}r\phantom{\rule{0}{0ex}}a\phantom{\rule{0}{0ex}}n\phantom{\rule{0}{0ex}}d\phantom{\rule{0}{0ex}}o$ manner.

Details

ISSN :
23317019
Volume :
11
Database :
OpenAIRE
Journal :
Physical Review Applied
Accession number :
edsair.doi...........43a84f8e818e9398aa4bee2e55f9fe51