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Advanced Coherent X-ray Diffraction and Electron Microscopy of Individual InP Nanocrystals on Si Nanotips for III-V-on- Si Electronics and Optoelectronics
- Source :
- Physical Review Applied. 11
- Publication Year :
- 2019
- Publisher :
- American Physical Society (APS), 2019.
-
Abstract
- Let's talk about your flaws\dots{} The authors present nondestructive examination of the crystallographic properties (including crystal size, facet shape, strain, and defects) of lone InP nanocrystals (NC) grown on Si nanostructures. This sort of three-dimensional structured imaging is of great significance in evaluating the quality of the active nanomaterials in fully processed nanoelectronic and nano-optoelectronic devices, even in an $o\phantom{\rule{0}{0ex}}p\phantom{\rule{0}{0ex}}e\phantom{\rule{0}{0ex}}r\phantom{\rule{0}{0ex}}a\phantom{\rule{0}{0ex}}n\phantom{\rule{0}{0ex}}d\phantom{\rule{0}{0ex}}o$ manner.
- Subjects :
- Nanostructure
Materials science
Condensed matter physics
General Physics and Astronomy
02 engineering and technology
021001 nanoscience & nanotechnology
01 natural sciences
Imaging phantom
law.invention
Crystal
Nanocrystal
law
0103 physical sciences
X-ray crystallography
Electron microscope
010306 general physics
0210 nano-technology
Subjects
Details
- ISSN :
- 23317019
- Volume :
- 11
- Database :
- OpenAIRE
- Journal :
- Physical Review Applied
- Accession number :
- edsair.doi...........43a84f8e818e9398aa4bee2e55f9fe51