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Effect of annealing temperature on the ferromagnetism of Co-implanted silicon

Authors :
Shuoxue Jin
Zheng Yang
Fengfeng Luo
Zhongcheng Zheng
Liping Guo
Jihong Chen
Congxiao Liu
Tiecheng Li
Source :
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 307:404-407
Publication Year :
2013
Publisher :
Elsevier BV, 2013.

Abstract

Si1−xCox magnetic semiconductors were prepared by implanting 200 keV Co ions into p-type Si(1 0 0) wafer at room temperature, followed by 600–900 °C annealing. Room temperature ferromagnetism was observed in all samples and saturation magnetization was enhanced after 900 °C annealing, for which nano-sized (several nm to 50 nm) CoSi2 precipitates were present. It was found that the formation of CoSi2 phase could play an important role in the enhancement of ferromagnetism.

Details

ISSN :
0168583X
Volume :
307
Database :
OpenAIRE
Journal :
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Accession number :
edsair.doi...........4320a2e89f9478fb5e6171f171bf1938
Full Text :
https://doi.org/10.1016/j.nimb.2013.01.019