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Effect of annealing temperature on the ferromagnetism of Co-implanted silicon
- Source :
- Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 307:404-407
- Publication Year :
- 2013
- Publisher :
- Elsevier BV, 2013.
-
Abstract
- Si1−xCox magnetic semiconductors were prepared by implanting 200 keV Co ions into p-type Si(1 0 0) wafer at room temperature, followed by 600–900 °C annealing. Room temperature ferromagnetism was observed in all samples and saturation magnetization was enhanced after 900 °C annealing, for which nano-sized (several nm to 50 nm) CoSi2 precipitates were present. It was found that the formation of CoSi2 phase could play an important role in the enhancement of ferromagnetism.
Details
- ISSN :
- 0168583X
- Volume :
- 307
- Database :
- OpenAIRE
- Journal :
- Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Accession number :
- edsair.doi...........4320a2e89f9478fb5e6171f171bf1938
- Full Text :
- https://doi.org/10.1016/j.nimb.2013.01.019