Study of n-Type InSb Thin Films Grown on Glass Substrate by Electron Beam Evaporation Technique

The present investigation deals the electrical and optical characterization of n-type InSb thin films fabricated on glass substrate at room temperature by electron beam evaporation technique using non-stoichiometric starting materials. The starting materials have been prepared in vacuum with different composition of indium and antimony as In1 − xSbx (0.2 ≤ x ≤ 0.4). The electrical resistivity decreases with increase of temperature shows semiconducting behavior. The Hall measurement indicates that the films were n-type. The films of thickness 300 nm having resistivity (ρ) (1.132–0.660) × 10−2 Ω cm, carrier concentration (n) (0.504–0.450) × 1018/cm3, Hall mobility (μ) (1.096–2.106) × 103 cm2/V s and activation energy (0.102–0.067) eV for all composition of indium and antimony in starting materials. The direct band gap has been calculated by Fourier transform infrared absorption spectra recorded at room temperature. The energy dispersive analysis of X-rays measurement of thin films indicates the variation in chemical composition about 1 %.