Annealing effects of low pressure mercury and excimer laser light on degraded a-Si:H TFTs

We have investigated the effects of ultraviolet (UV) irradiation on the characteristics of a -Si:H films and a -Si:H TFTs by employing both a low-pressure mercury lamp and an excimer laser. The intensity of the XeCl excimer laser was varied from 10 to 80 mJ/cm 2 . The electrical properties of a -Si:H films and the characteristics of TFTs that were degraded by various stresses such as visible light soaking (130,000 1x, 1∼8 hrs) and electrical stress (30 V, 8 hrs) for a long period, recovered considerably to their original states after exposure.