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Tailoring the electronic properties of GaAs/AlAs superlattices by InAs layer insertions

Authors :
T. M. Fromhold
Mohamed Henini
D. Sherwood
P. C. Main
G. Hill
Amalia Patanè
Laurence Eaves
Source :
Applied Physics Letters. 81:661-663
Publication Year :
2002
Publisher :
AIP Publishing, 2002.

Abstract

We investigate the electrical and optical properties of GaAs/AlAs superlattices (SLs) in which a thin (⩽1.2 monolayers) InAs layer is inserted in the central plane of each GaAs quantum well. The InAs layer modifies the structure of the SL unit cell and provides an additional design parameter for tailoring the energy of the lowest miniband and the size of the minigap. We exploit this effect to enhance electron injection from a doped contact layer into the first miniband and to inhibit interminiband coupling.

Details

ISSN :
10773118 and 00036951
Volume :
81
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........42cde49ecdeab00016d44bcdc245ba3d
Full Text :
https://doi.org/10.1063/1.1496140