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Tailoring the electronic properties of GaAs/AlAs superlattices by InAs layer insertions
- Source :
- Applied Physics Letters. 81:661-663
- Publication Year :
- 2002
- Publisher :
- AIP Publishing, 2002.
-
Abstract
- We investigate the electrical and optical properties of GaAs/AlAs superlattices (SLs) in which a thin (⩽1.2 monolayers) InAs layer is inserted in the central plane of each GaAs quantum well. The InAs layer modifies the structure of the SL unit cell and provides an additional design parameter for tailoring the energy of the lowest miniband and the size of the minigap. We exploit this effect to enhance electron injection from a doped contact layer into the first miniband and to inhibit interminiband coupling.
- Subjects :
- Condensed Matter::Quantum Gases
Materials science
Photoluminescence
Physics and Astronomy (miscellaneous)
Solid-state physics
Condensed Matter::Other
business.industry
Superlattice
Doping
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Gallium arsenide
Condensed Matter::Materials Science
chemistry.chemical_compound
chemistry
Optoelectronics
Thin film
business
Layer (electronics)
Quantum well
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 81
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........42cde49ecdeab00016d44bcdc245ba3d
- Full Text :
- https://doi.org/10.1063/1.1496140