Self-limiting effects of flow rate modulation epitaxy of GaAs on patterned substrate

A new self-limited growth induced by surface migration of Ga atoms during flow rate modulation epitaxy of GaAs on patterned substrate is demonstrated, which is considered to be very useful for the fabrication of many fine semiconductor structures, especially highly uniform quantum wires and quantum dots. The formation of stable surface reconstructions is proposed as a possible mechanism for this unique self-limiting phenomenon.