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High Photovoltage Generation at Minority-Carrier Controlled n-Si/p-CuI Heterojunction with Morphologically Soft CuI
- Source :
- The Journal of Physical Chemistry C. 112:11586-11590
- Publication Year :
- 2008
- Publisher :
- American Chemical Society (ACS), 2008.
-
Abstract
- Solar cells with a structure of p−n heterojunction, “ITO/p-CuI/n-Si” (ITO = indium tin oxide), were fabricated by depositing p-CuI on hydrogen (H)-terminated or methyl (CH 3)-terminated single-crystal n-Si (111) followed by the sputter deposition of ITO or by the press-contact of commercial conductive oxide glass with p-CuI. The solar cells generated very high open-circuit photovoltages ( V oc), reaching 0.617 V without surface texturing and back surface field treatments. Experiments have shown that a morphologically soft property of p-CuI as well as a low density of surface states at H-terminated or CH 3-terminated n-Si (111) is responsible for the generation of high V oc. Theoretical investigation has also shown that the p-CuI/n-Si contact forms an ideal minority-carrier controlled junction suitable for the generation of high V oc.
- Subjects :
- Materials science
Hydrogen
Analytical chemistry
chemistry.chemical_element
Nanotechnology
Heterojunction
Sputter deposition
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Indium tin oxide
General Energy
Back surface field
chemistry
Conductive oxide
Low density
Physical and Theoretical Chemistry
Surface states
Subjects
Details
- ISSN :
- 19327455 and 19327447
- Volume :
- 112
- Database :
- OpenAIRE
- Journal :
- The Journal of Physical Chemistry C
- Accession number :
- edsair.doi...........422feae42511f5e1c0f9fafe7abd3264