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Direct evidence for abrupt postcrystallization germanium precipitation in thin phase-change films of Sb–15at.% Ge
- Source :
- Applied Physics Letters. 93:071906
- Publication Year :
- 2008
- Publisher :
- AIP Publishing, 2008.
-
Abstract
- We present evidence for the instability in the crystalline (metallic) state of binary Te-free phase-change Ge–Sb thin films considered for integration into nonvolatile nanosized memory cells. We find that while the amorphous (semiconducting) phase of eutectic Sb–15at.% Ge is very robust until Sb crystallization at 240°C, at about 350°C, germanium rapidly precipitates out. Ge precipitation, visualized directly with transmission electron microscopy, is exothermic and is found to affect the films’ reflectivity, resistance, and stress. It converts melting into a two-step process, which may seriously impact the switching reliability of a device.
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 93
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........42274914b2b06e3683ce2e0c3f45dc1d
- Full Text :
- https://doi.org/10.1063/1.2970106