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Single-electron transport in small resonant-tunneling diodes with various barrier-thickness asymmetries

Single-electron transport in small resonant-tunneling diodes with various barrier-thickness asymmetries

Authors :
Rolf J. Haug
Hans Lüth
Thomas Schmidt
Klaus von Klitzing
A. Förster
Source :
Physical Review B. 55:2230-2236
Publication Year :
1997
Publisher :
American Physical Society (APS), 1997.

Abstract

We fabricated submicrometer-diameter double-barrier diodes from four wafers with different barrier-thickness asymmetry. All samples exhibit staircaselike features in the current-voltage characteristic at the current threshold due to single-electron tunneling. Our study focuses on the properties of the first current step which arises from tunneling through the energetically lowest discrete electron state within the double-barrier region. The analysis of the bias position of the step allows a spatial spectroscopy of the vertical position of the lowest discrete level in the double-barrier region. The magnitude of the step is in excellent agreement with theory for all barrier-thickness asymmetries whereas the broadening of the step edge exceeds the lifetime-related width of the discrete state by one order of magnitude.

Details

ISSN :
10953795 and 01631829
Volume :
55
Database :
OpenAIRE
Journal :
Physical Review B
Accession number :
edsair.doi...........41e280f3f7c1f5a84e1eeeff362db668
Full Text :
https://doi.org/10.1103/physrevb.55.2230