Growth of InAlAs/InGaAs heterostructure and Its 1/f noise characteristics

A pseudomorphic InAlAs/In0.8Ga0.2As/InP heterostructure, with the very high electron mobility of over 1.5 m2/V at room temperature, is successfully grown on InP by our molecular beam epitaxial growth system. This is the ultimate and the most promising substrate for the high electron mobility transistors (HEMT), and the high speed logic circuits as well. An ideal 1/f characteristics was observed in this material throughout the temperature range between 300 and 50 K for the electric field between 1 and 200 V/cm. The Hooge noise parameter αH of a bridge type Hall element was of the order of 10−4 at room temperature, increasing with decreasing the temperature. The parameter αH increased with the electric field at room temperature, and was independent of the electric field at 77 K