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Spatially resolved thickness analysis of microscale structures using micro-Raman spectroscopy
- Source :
- Applied Physics Letters. 89:211903
- Publication Year :
- 2006
- Publisher :
- AIP Publishing, 2006.
-
Abstract
- A novel method, by using micro-Raman spectroscopy, is developed to measure the thickness of microelectromechanical system structures with high spatial resolution. When a microscale structure is heated by a laser, the temperature rise of the structure depends on the structure thickness and material properties. Therefore, the structure thickness can be measured using Raman shift, which is a function of temperature. Micro-Raman spectrometer is capable of measuring the thickness distribution of microscale structures with micron spatial resolution. This technique is evaluated by characterizing the thickness distribution of a single-crystal silicon (c-Si) membrane. The measured thickness distributions are verified by scanning electron microscope measurement.
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 89
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........41c80b1d4f83be5179b108a65f44c466