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The paper describes the features of films formation from glassy dielectric suspension on sapphire substrate by centrifugation. This method allows to obtain the glassy dielectric films with most uniform thickness and uniform coating of different compositions without the use of complex processes. It was found the set of parameters influencing on the roughness value for obtained glassy dielectric on sapphire. The technological route for glassy dielectric formation on sapphire substrate is presented. It can be the basis for the production of radiation-resistant elements for microelectronics. The glassy dielectric suspension solution was prepared initially for glass dielectric film obtaining on sapphire substrate. At the first stage it is necessary to grind glassy dielectric material to powder with specific surface of 5000 cm2 /g and then to add the isobutyl alcohol, and to grind glass powder with frequency of 1500 rpm for 24 hours in an agate drum. Technological route for junction formation of glassy dielectric and sapphire substrate for microelectronic components was developed. Putting the glassy dielectric material suspension on sapphire substrate is performed for 3-5 minutes with the rotational speed of the centrifuge of 7000 rpm. Drying uniformly inflicted glassy dielectric conducted in an oven at the temperature of 50–60 ° C for 3–5 min. High temperature annealing is carried out in a muffle furnace at T