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ChemInform Abstract: Cationic Clathrate I Si46-xPxTey(6.6(1) ≤ y ≤ 7.5(1), x ≤ 2y): Crystal Structure, Homogeneity Range, and Physical Properties

Authors :
U. Burkhardt
F. Haarmann
Ulrich S. Schwarz
Yu. Grin
Andrei V. Shevelkov
Kirill Kovnir
Walter Schnelle
Julia V. Zaikina
Source :
ChemInform. 40
Publication Year :
2009
Publisher :
Wiley, 2009.

Abstract

A new cationic clathrate I Si(46-x)P(x)Te(y) (6.6(1) < or = y < or = 7.5(1), x < or = 2y at 1375 K) was synthesized from the elements and characterized by X-ray powder diffraction, thermal analysis, scanning electron microscopy, wavelength dispersive X-ray spectroscopy (WDXS), neutron powder diffraction, and (31)P NMR spectroscopy. The thermal behaviors of the magnetic susceptibility and resistivity were investigated as well. Si(46-x)P(x)Te(y) reveals a wide homogeneity range due to the presence of vacancies in the tellurium guest positions inside the smaller cage of the clathrate I structure. The vacancy ordering in the structure of Si(46-x)P(x)Te(y) causes the change of space group from Pm3n (ideal clathrate I) to Pm3 accompanied by the redistribution of P and Si atoms over different framework positions. Neutron powder diffraction confirmed that P atoms preferably form a cage around the vacancy-containing tellurium guest position. Additionally, (31)P NMR spin-spin relaxation experiments revealed the presence of sites with different coordination of phosphorus atoms. Precise determination of the composition of Si(46-x)P(x)Te(y) by WDXS showed slight but noticeable deviation (x < or = 2y) of phosphorus content from the Zintl counting scheme (x = 2y). The compound is diamagnetic while resistivity measurements show activated behavior or that of heavily doped semiconductors. Thermal analysis revealed high stability of the investigated clathrate: Si(46-x)P(x)Te(y) melts incongruently at approximately 1460 K in vacuum and is stable in air against oxidation up to 1295 K.

Details

ISSN :
15222667 and 09317597
Volume :
40
Database :
OpenAIRE
Journal :
ChemInform
Accession number :
edsair.doi...........40af77b21515af860aec5ddbafd239a7