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Dependence of the electron capture velocity on the quantum-well depth in semiconductor lasers
- Source :
- Semiconductors. 50:667-670
- Publication Year :
- 2016
- Publisher :
- Pleiades Publishing Ltd, 2016.
-
Abstract
- Three laser structures with a single strained InGaAs quantum well of different depths and a GaAs or Al0.1Ga0.9As waveguide region are grown by metal-organic chemical vapor deposition. Using the experimentally determined values of the threshold current density and internal differential quantum efficiency, the velocity of electron capture into the quantum well is calculated for each of these structures. It is found that the capture velocity into deep quantum wells is significantly lower than into shallow ones.
- Subjects :
- 010302 applied physics
Condensed Matter::Other
Electron capture
Chemistry
Quantum point contact
02 engineering and technology
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
021001 nanoscience & nanotechnology
Condensed Matter Physics
Laser
01 natural sciences
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
Semiconductor laser theory
law.invention
Condensed Matter::Materials Science
Quantum dot laser
law
0103 physical sciences
Quantum efficiency
Atomic physics
0210 nano-technology
Current density
Quantum well
Subjects
Details
- ISSN :
- 10906479 and 10637826
- Volume :
- 50
- Database :
- OpenAIRE
- Journal :
- Semiconductors
- Accession number :
- edsair.doi...........4061079f76bc57b5411d3607e693b521