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A novel sublithographic tunnel diode based 5V-only flash memory
- Source :
- International Technical Digest on Electron Devices.
- Publication Year :
- 2002
- Publisher :
- IEEE, 2002.
-
Abstract
- A novel tunnel diode has been developed for high-density 5-V-only flash memories. The memory tunnel diode is remote from the channel, self-aligned, sublithographic, and scalable. This remote tunnel diode provides several advantages over a conventional tunnel diode: higher junction breakdown voltage, reduced substrate current during erase, reduced tunnel oxide area, reduced cell area, and competitive cell endurance. A 256-kb 5-V-only flash memory incorporating this tunnel diode is shown to have excellent operation and reliability characteristics. >
Details
- Database :
- OpenAIRE
- Journal :
- International Technical Digest on Electron Devices
- Accession number :
- edsair.doi...........40542550ad4d03f9b5348e3ba17f4349