A novel sublithographic tunnel diode based 5V-only flash memory

Authors :: Sung-Wei Lin
Manzur Gill
Sebastiano D'Arrigo
Giovanni Santin
E. Kougianos
G. Naso
P. Shah
B. Huber
J. Wong
M. Middendorf
P. Hefley
A. Nuyen
R. Cleavelin
Source :: International Technical Digest on Electron Devices.
Publication Year :: 2002
Publisher :: IEEE, 2002.
Abstract: A novel tunnel diode has been developed for high-density 5-V-only flash memories. The memory tunnel diode is remote from the channel, self-aligned, sublithographic, and scalable. This remote tunnel diode provides several advantages over a conventional tunnel diode: higher junction breakdown voltage, reduced substrate current during erase, reduced tunnel oxide area, reduced cell area, and competitive cell endurance. A 256-kb 5-V-only flash memory incorporating this tunnel diode is shown to have excellent operation and reliability characteristics. >