1200μm2 Physical Random-Number Generators Based on SiN MOSFET for Secure Smart-Card Application

Authors :: Mari Matsumoto
Ryuji Ohba
Fujita Shinobu
Kazutaka Ikegami
Shinichi Yasuda
Tetsufumi Tanamoto
Source :: ISSCC
Publication Year :: 2008
Publisher :: IEEE, 2008.
Abstract: In this work, because of the high-amplitude random noise at high frequency from the SiN MOSFET, we need only a single amplifier and A/D converter, and the amplifier area is decreased.

Subjects :: Engineering
Bootstrapping (electronics)
business.industry
Random number generation
Amplifier
Random noise
MOSFET
Electrical engineering
Electronic engineering
Smart card
Mosfet circuits
business
A d converter

Database :: OpenAIRE
Journal :: 2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers
Accession number :: edsair.doi...........40534f83c935cf1e62e4029f47a8e314

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