Determination of densities and mobilities of heavy and light holes inp‐type Si using reduced‐conductivity‐tensor analyses of magnetic‐field‐dependent Hall and resistivity measurements

The densities and mobilities of the individual heavy‐ and light‐hole carriers have been simultaneously determined at various temperatures (40 K to 130 K) in three p‐type, single‐crystal Si samples. The separation of the two‐hole components is achieved by multicarrier analyses of magnetic‐field‐dependent Hall and resistivity measurements within the two‐carrier approximation of the reduced‐conductivity‐tensor scheme. The explicit experimental values for the densities and mobilities of the two‐hole components obtained in this work should be considered as a valuable addition to the existing database for silicon material parameters. They should also be useful to silicon device physics and modeling.