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A Low-Temperature Nickel Silicide Process for Wafer Bonding and High-Density Interconnects
- Source :
- IEEE Transactions on Components, Packaging and Manufacturing Technology. 10:908-916
- Publication Year :
- 2020
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2020.
-
Abstract
- Wafer-scale heterogeneous integration provides a viable pathway for the development of highly capable microsystems. However, it remains challenging to integrate die-and wafer-level components with a high-density interconnects while minimizing the system volume and within the temperature restrictions imposed by integrated circuits. Advancements in CMOS have motivated the development of low-temperature and low-resistance metal–silicon alloys or silicides. Nickel silicide (NiSi) is a CMOS-compatible material that forms at temperatures and anneal times within the thermal budget of commercial CMOS die and can be implemented with a wide range of nickel and silicon thin-film processing methods. We describe here the development of a 3-D integration strategy utilizing NiSi formation to generate both mechanical bonding and electrical interconnection between wafers. Specifically, we show that our NiSi-based wafer-bonding process is effective below 400 °C, at very short anneal times (minutes), and with a variety of thin-film processing methods. This NiSi-based process offers a robust approach for creating heterogeneously integrated microsystems in a CMOS-compatible fashion.
- Subjects :
- Interconnection
Wafer-scale integration
Materials science
Silicon
Wafer bonding
chemistry.chemical_element
Hardware_PERFORMANCEANDRELIABILITY
Integrated circuit
Engineering physics
Industrial and Manufacturing Engineering
Die (integrated circuit)
Electronic, Optical and Magnetic Materials
law.invention
CMOS
chemistry
law
Hardware_INTEGRATEDCIRCUITS
Wafer
Electrical and Electronic Engineering
Subjects
Details
- ISSN :
- 21563985 and 21563950
- Volume :
- 10
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Components, Packaging and Manufacturing Technology
- Accession number :
- edsair.doi...........3f6ac85ce4ecf0e9572114caee6cfa4b