Integration of InGaN quantum dots into nitride‐based microcavities

We report on the successful integration of a single InGaN quantum dot sheet into a resonant half cavity structure con-sisting of an AlGaN/GaN distributed Bragg reflector and a GaN λ-cavity layer. For reference, small-diameter pillar mi-crocavites fabricated by focused-ion beam etching from an empty planar cavity are studied. These structures exhibit discrete transversal modes and Q factors of 260. The quantum dot active region has been grown by metal-organic vapour-phase epitaxy using a two-step deposition technique. Optical spectra measured by micro-photoluminescence reveal distinct spectrally sharp emission lines around 2.73 eV which can be attributed to the emission of single InGaN quantum dots. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)