Back to Search
Start Over
Modeling dynamic overshoot in ESD protections
- Source :
- 2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD).
- Publication Year :
- 2018
- Publisher :
- IEEE, 2018.
-
Abstract
- The dynamic voltage overshoot of an ESD protection during triggering is determined by conductivity modulation in the silicon and inductive overshoot in the metal traces. The paper describes how to separate the two contributions and how to model these phenomena. It shows how to use this result to boost system protection for a typical USB3 interface beyond 15kV.
- Subjects :
- 010302 applied physics
Conductivity modulation
Electrostatic discharge
Computer science
business.industry
Interface (computing)
Electrical engineering
020206 networking & telecommunications
02 engineering and technology
Integrated circuit
01 natural sciences
System protection
law.invention
Voltage overshoot
Modulation
law
0103 physical sciences
0202 electrical engineering, electronic engineering, information engineering
Overshoot (microwave communication)
business
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- 2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)
- Accession number :
- edsair.doi...........3f1034004bcfec6afa99d30229f55f71