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Structures, Stabilites and Electronic Properties of Phenyl Silsesquioxanes Si2nO3nPh2n (n=1-5): A DFT Study

Authors :
Shu Yuan Yu
Yu Fang Ma
Ze Min Chen
Cheng Gen Zhang
Source :
Advanced Materials Research. :450-454
Publication Year :
2012
Publisher :
Trans Tech Publications, Ltd., 2012.

Abstract

Density functional theory (DFT) calculations are performed to investigate the structures of phenyl silsesquioxanes Si2nO3nPh2n (n=1-5). Our study focuses on the structures, stabilities, and electronic properties of the phenyl silsesquioxanes. The large HOMO–LUMO gaps, which range from 5.14 to 6.30 eV, imply optimal electronic structures for these molecules. The energy differences between the possible conformers of same size phenyl silsesquioxanes are small.

Details

ISSN :
16628985
Database :
OpenAIRE
Journal :
Advanced Materials Research
Accession number :
edsair.doi...........3f08988e3ce4bb99c07551e6ac1ca610
Full Text :
https://doi.org/10.4028/www.scientific.net/amr.503-504.450