Stress-free InN nanowires grown on graphene by sublimation method

Stress-free InN nanowires (NWs) have been grown on Au/graphene/GaN/sapphire substrate by atmospheric pressure metal-In sublimation method. The phonon E2(high) and A1(LO) mode in Raman spectra of InN grown on graphene is observed at 490.8 and 585 cm−1 respectively, which is similar to that of bulk InN. The high resolution TEM (HRTEM) image of InN NWs shows that the interplanar spacing of (0 0 0 2) and (1 1 −2 0) are 2.85 A and 1.77 A, which is according with the XRD result. All the results confirm that Au-catalyst assists the growth of InN NWs, and the stress is released by the aid of the graphene inter-layer.