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Formation of ordered Ge quantum dots on the Si(111)–(7×7) surface

Authors :
Yiqi Zhang
S. J. Pang
Sishen Xie
Huajian Gao
Lihe Yan
Source :
Applied Physics Letters. 79:3317-3319
Publication Year :
2001
Publisher :
AIP Publishing, 2001.

Abstract

We present a pathway for the formation of ordered Ge quantum dots on Si(111)–(7×7) substrate. Self-assembled growth of Ge quantum dots on the Si(111)–(7×7) surface has been investigated using scanning tunneling microscopy. The Ge is grown on the substrate by solid phase epitaxy at room temperature. It has been found that the deposited submonolayer Ge can aggregate and form ordered Ge quantum dots on the surface through controlling the annealing temperature. The formation of ordered Ge quantum dots is due to the preferential adsorption sites of Ge on Si(111)–(7×7). The formed Ge quantum dots may have a great potential in the application of nanodevices.

Details

ISSN :
10773118 and 00036951
Volume :
79
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........3d8097ca7a6aec4cee1a2ef93f0b8428