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Formation of ordered Ge quantum dots on the Si(111)–(7×7) surface
- Source :
- Applied Physics Letters. 79:3317-3319
- Publication Year :
- 2001
- Publisher :
- AIP Publishing, 2001.
-
Abstract
- We present a pathway for the formation of ordered Ge quantum dots on Si(111)–(7×7) substrate. Self-assembled growth of Ge quantum dots on the Si(111)–(7×7) surface has been investigated using scanning tunneling microscopy. The Ge is grown on the substrate by solid phase epitaxy at room temperature. It has been found that the deposited submonolayer Ge can aggregate and form ordered Ge quantum dots on the surface through controlling the annealing temperature. The formation of ordered Ge quantum dots is due to the preferential adsorption sites of Ge on Si(111)–(7×7). The formed Ge quantum dots may have a great potential in the application of nanodevices.
- Subjects :
- Materials science
Physics and Astronomy (miscellaneous)
Condensed matter physics
Annealing (metallurgy)
chemistry.chemical_element
Germanium
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Epitaxy
law.invention
Condensed Matter::Materials Science
Preferential adsorption
chemistry
Semiconductor quantum dots
Quantum dot
law
Self-assembly
Scanning tunneling microscope
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 79
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........3d8097ca7a6aec4cee1a2ef93f0b8428