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600-V shielded trench split-gate VDMOS improving the figure of merit
- Source :
- International Journal of Electronics. 107:1083-1097
- Publication Year :
- 2019
- Publisher :
- Informa UK Limited, 2019.
-
Abstract
- A shielded trench split-gate vertical double-diffused metal-oxide-semiconductor field-effect transistor (ST-SG-VDMOS) is proposed, and the analytical model for the main components of specific on-re...
- Subjects :
- Materials science
business.industry
020208 electrical & electronic engineering
Transistor
020206 networking & telecommunications
02 engineering and technology
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
law.invention
Computer Science::Hardware Architecture
Condensed Matter::Materials Science
Computer Science::Emerging Technologies
law
Shielded cable
Trench
0202 electrical engineering, electronic engineering, information engineering
Figure of merit
Optoelectronics
Electrical and Electronic Engineering
business
Subjects
Details
- ISSN :
- 13623060 and 00207217
- Volume :
- 107
- Database :
- OpenAIRE
- Journal :
- International Journal of Electronics
- Accession number :
- edsair.doi...........3d482d10e790525b30e30a206d45f320
- Full Text :
- https://doi.org/10.1080/00207217.2019.1692375