Zero Cross Analysis of RTS Noise

RTS noise of Si MOSFETs and GaN HFET was analysed by means of zero cross method. Noise spectral density of crossing events in 1 ms to 100s windows was flat over 10−5 to 103 frequency range without apparent 1/f noise. The fluctuation of crossing rate was same in every sample, although other noise components next to RTS noise are quite different in Si and GaN devices. Correlation analysis of pulse length in doublets and triplets of successive pulses didn’t reveal any mutual dependence.