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IMCS2: Novel Device-to-Architecture Co-Design for Low-Power In-Memory Computing Platform Using Coterminous Spin Switch
- Source :
- IEEE Transactions on Magnetics. 54:1-14
- Publication Year :
- 2018
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2018.
-
Abstract
- Spin switch (SS) is a promising spintronic device which exhibits compactness, low power, non-volatility, input–output isolation leveraging giant spin Hall effect, spin transfer torque, and dipolar coupling. In this paper, we propose a novel device-to-architecture co-design for an in-memory computing platform using coterminous SS (IMCS2), which could simultaneously work as non-volatile memory and reconfigurable in-memory logic (AND/NAND, OR/NOR, and XOR/XNOR) without add-on logic circuits to memory chip. The computed logic output could be simply read out like a normal magnetic random access memory bit cell using the shared memory peripheral circuits. Such intrinsic in-memory logic could be used to process data within memory to greatly reduce power-hungry and long distance data communication in the conventional von Neumann computing system. The IMCS2-based in-memory bulk bitwise Boolean vector operation shows ${\sim }9\times $ energy saving and ${\sim }3\times $ speedup compared with that of DRAM-based in-memory computing platform. We further employ in-memory multiplication to evaluate the performance of the proposed in-memory computing platform for vector–vector multiplication with different vector sizes.
- Subjects :
- 010302 applied physics
Random access memory
Hardware_MEMORYSTRUCTURES
Memory chip
Speedup
Spintronics
Computer science
Spin-transfer torque
NAND gate
02 engineering and technology
01 natural sciences
020202 computer hardware & architecture
Electronic, Optical and Magnetic Materials
Computational science
XNOR gate
Shared memory
In-Memory Processing
Logic gate
0103 physical sciences
Memory architecture
0202 electrical engineering, electronic engineering, information engineering
Spin Hall effect
Multiplication
Electrical and Electronic Engineering
Dram
Subjects
Details
- ISSN :
- 19410069 and 00189464
- Volume :
- 54
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Magnetics
- Accession number :
- edsair.doi...........3cbaa9a43c0b796bf40ae29ce0fb316c
- Full Text :
- https://doi.org/10.1109/tmag.2018.2819959