采用顶部籽晶熔融辅助熔渗法制备高性能单畴GdBCO超导块材

In this paper, high performance and large single domain GdBCO bulk superconductors have been successfully fabricated by the top-seeded-melt-texture-infiltration-growth process (TSMT-IG). The effect of the growth morphology, growth interface, the magnetic levitation force and trapped flux of single domain GdBCO bulk superconductors has been investigated. The above result indicates that, the utilization of NdBCO seed crystal and the production efficiency of the single domain GdBCO bulk superconductor can be effectively improved by the new TSMT-IG process, which can inhibit the random nucleation phenomenon at some extent during the process of crystal growth. In addition, the application of new technology also helps to improve the growth performance of GdBCO samples.