Thermal Characteristic and Performance of the Glass Interposer with TGVs (Through-Glass Via)

In this study, we used simulation technique to analyze the thermal characteristics of solo TGV (through-glass via) structure and solo TSV (through-silicon via) structure. The analysis showed, no matter in in-plane direction or in cross-plane direction, the thermal conductivity of a TGV structure is much lower than that of a TSV structure. Also, using simulation, we chose a typical 2.5D IC SiP (system in package) to compare the thermal performances between the SiP with TGV interposer and TSV interposer by using simulation. The specific via structures of 30μm in diameter and 60μm in pitch were adopted in the case studies. The results show the thermal performance of the 3D IC system with TSV is slightly better than that of the system with TGV, but both performances are nearly equal. The evaluations demonstrate the ultra-low thermal conductivity does not damage the thermal performance of a 3D IC SiP with TGV interposer; and proves the feasibility of the glass interposer for electronics applications.