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Fringing Field Effects in Ferroelectric Negative Capacitance Field-Effect Transistors

Authors :
H. Ota
S. Migita
H. Asai
K. Fukuda
T. Ikegami
J. Hattori
A. Toriumi
Source :
Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials.
Publication Year :
2017
Publisher :
The Japan Society of Applied Physics, 2017.

Details

Database :
OpenAIRE
Journal :
Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials
Accession number :
edsair.doi...........3c729dc579426598b82b6b71872a8667
Full Text :
https://doi.org/10.7567/ssdm.2017.e-4-03