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Effect of V/III ratio on the growth of (112¯2) AlGaN by metalorganic vapour phase epitaxy
- Source :
- Journal of Crystal Growth. 435:12-18
- Publication Year :
- 2016
- Publisher :
- Elsevier BV, 2016.
-
Abstract
- The effect of V/III ratio on the growth and properties of AlGaN layers grown on (112¯2) AlN templates grown on (101¯0) sapphire by metalorganic vapour phase epitaxy was studied. The surface morphology of the (112¯2) AlGaN layers and the (112¯2) AlN templates showed an undulation along [ 1 1 ¯ 00 ] AlGaN , AlN . The Al-content and thickness of the layers increased with decreasing V/III ratio due to a reduction in the parasitic reactions of the precursors. The Al-content of the (112¯2) layers was found to be in the range of 29.5−47.9%, which is lower than the composition of the simultaneously grown (0001) reference layers (30.4−58.0%). This was attributed to a higher density of cation (nitrogen) dangling bonds on the (112¯2) surface. Low temperature photoluminescence measurements of the (112¯2) layers showed an emission wavelength that shifts gradually from 273 nm to 306 nm with increasing V/III ratio. A decreased PL intensity of the layers with decreasing V/III ratio was attributed to an increase in cation vacancies. The Stokes-shift of the (112¯2) layers was estimated to be about 60−194 meV, and this shift increases with increasing Al-content (decreasing V/III ratio) correlated to an increased exciton localization.
- Subjects :
- 010302 applied physics
Low temperature photoluminescence
Morphology (linguistics)
Materials science
business.industry
Exciton
Analytical chemistry
Dangling bond
chemistry.chemical_element
02 engineering and technology
021001 nanoscience & nanotechnology
Condensed Matter Physics
01 natural sciences
Nitrogen
Inorganic Chemistry
Wavelength
chemistry
0103 physical sciences
Materials Chemistry
Sapphire
Optoelectronics
Metalorganic vapour phase epitaxy
0210 nano-technology
business
Subjects
Details
- ISSN :
- 00220248
- Volume :
- 435
- Database :
- OpenAIRE
- Journal :
- Journal of Crystal Growth
- Accession number :
- edsair.doi...........3c655b519bc82f92785ae909eb3cc949