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Wettability and pressureless infiltration mechanism in SiC-Cu systems
- Source :
- International Journal of Minerals, Metallurgy and Materials. 16:327-333
- Publication Year :
- 2009
- Publisher :
- Springer Science and Business Media LLC, 2009.
-
Abstract
- The wetting behavior of copper alloys on SiC substrates was studied by a sessile drop technique. The microstructure of SiCp/Cu composites and the pressureless infiltration mechanism were analyzed. The results indicate that Ti and Cr are effective elements to improve the wettability, while Ni, Fe, and Al have minor influence on the improvement of wettability. Non-wetting to wetting transition occurs at 1210 and 1190°C for Cu-3Al-3Ni-9Si and Cu-3Si-2Al-1Ti, respectively. All the copper alloys react with SiC at the interface forming a reaction layer except for Cu-3Al-3Ni-9Si. High Si content favors the suppression of interfacial reaction. The infiltration mechanism during pressureless infiltration is attributed to the decomposition of SiC. The beneficial effect of Fe, Ni, and Al is to favor the dissolution of SiC. The real active element during pressureless infiltration is Si.
- Subjects :
- Interfacial reaction
Materials science
Mechanical Engineering
Metallurgy
Metals and Alloys
chemistry.chemical_element
Microstructure
Copper
Infiltration (hydrology)
Sessile drop technique
Chemical engineering
Wetting transition
chemistry
Geochemistry and Petrology
Mechanics of Materials
Materials Chemistry
Wetting
Dissolution
Subjects
Details
- ISSN :
- 16744799
- Volume :
- 16
- Database :
- OpenAIRE
- Journal :
- International Journal of Minerals, Metallurgy and Materials
- Accession number :
- edsair.doi...........3c5555e3688df023ca23cbd164d07b2a