Current-acceleration for rapid time-to-failure determination of bipolar junction transistors under emitter-base reverse-bias stress

An experimental technique is described for accelerated time-to-failure measurement of bipolar junction transistors under low-voltage emitter-base reverse-bias stress. Acceleration of 100 or more can be attained enabling ten-year operating life extrapolation at low operation voltages (/spl les/3.3 V) in less than 100 hours. The technique, the current acceleration method, exploits the large punch-through current when the collector is shorted to the base during the stress. The technique also provides a means to determine the degradation kinetics and fundamental failure mechanisms at low power supply voltages (3.3 V, 2.5 V, or lower) and low hot carrier kinetic energies. >