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Tin-Assisted Synthesis of ε−Ga2O3 by Molecular Beam Epitaxy
- Source :
- Physical Review Applied. 8
- Publication Year :
- 2017
- Publisher :
- American Physical Society (APS), 2017.
-
Abstract
- Metastable $ϵ$-gallium oxide is expected to have very good properties for high-power electronics, combining the large band gap and high breakdown field of $\ensuremath{\beta}$-Ga${}_{2}$O${}_{3}$ with a very high spontaneous polarization. Unfortunately, synthesizing $ϵ$-Ga${}_{2}$O${}_{3}$ is quite tricky, yet the authors have managed it. Introducing tin avoids the formation of volatile suboxides, which leadsto a widened growth window in which $ϵ$-gallium oxide can beformed. Furthermore, the growth mechanism that the authors revealcould be relevant for the growth of any binary oxide.
- Subjects :
- 010302 applied physics
Materials science
Band gap
Oxide
General Physics and Astronomy
chemistry.chemical_element
02 engineering and technology
021001 nanoscience & nanotechnology
01 natural sciences
Spontaneous polarization
chemistry.chemical_compound
Crystallography
chemistry
Metastability
0103 physical sciences
0210 nano-technology
Tin
Molecular beam epitaxy
Subjects
Details
- ISSN :
- 23317019
- Volume :
- 8
- Database :
- OpenAIRE
- Journal :
- Physical Review Applied
- Accession number :
- edsair.doi...........3c271d849db7e39f14729280b376242f