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A Correlative Analysis Between Characteristics of FinFETs and SRAM Performance
- Source :
- IEEE Transactions on Electron Devices. 59:1345-1352
- Publication Year :
- 2012
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2012.
-
Abstract
- A correlation between the characteristics of the 30-nm LG fin-shaped field-effect transistors and the static random-access memory performance is precisely studied. By investigating an effect of the Vth variation to the static noise margin (SNM) variation of two different memory states of the storage node, it is revealed that the Vth variations of the pull-up, pull-down, and pass-gate transistors correlate with the SNM. Moreover, the contribution and the severity of each transistor variation to σSNM are clarified.
- Subjects :
- Correlative
Hardware_MEMORYSTRUCTURES
Materials science
Transistor
Electronic, Optical and Magnetic Materials
law.invention
Noise margin
law
Logic gate
MOSFET
Hardware_INTEGRATEDCIRCUITS
Electronic engineering
Node (circuits)
Static noise margin
Static random-access memory
Electrical and Electronic Engineering
Hardware_LOGICDESIGN
Subjects
Details
- ISSN :
- 15579646 and 00189383
- Volume :
- 59
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Electron Devices
- Accession number :
- edsair.doi...........3bbf2bf56f30856223446288fcb6b576
- Full Text :
- https://doi.org/10.1109/ted.2012.2188633