Influence of substitution of Al-O for Si-N on improvement of photoluminescence properties and thermal stability of Ba2Si5N8:Eu2+ red emitting phosphors

Red emitting Ba 2 Si (5-x) Al x N (8-x) O x :Eu 2+ phosphors were successfully produced by high-temperature solid state reaction method and their luminescence properties were experimentally measured. The analysis of the experimental results suggests that the partial substitution of Al-O for Si-N in the host lattice improves the photoluminescence properties and the thermal stability of the produced phosphors. The phosphors exhibited a broad red emission band between 500 and 750 nm. A red shift of emission peak from 588 to 624 nm was recorded with the increase of Al-O content, attributed to the enhancement of stokes shift. The excitation spectrum of the produced phosphors ranged between 200 and 600 nm, covering the UV and the blue region, and suggesting these materials as potentially suitable for use as conversion phosphors for white LED applications in the field of solid state lighting.