Excitonic resonant photorefractive devices around 1.06 μm

Authors :: Kazuo Kuroda
H. Kageshima
Takao Someya
Satoshi Iwamoto
Masao Nishioka
Tsutomu Shimura
Katsuyuki Fukutani
S. Taketomi
Yasuhiko Arakawa
Source :: Optical Materials. 18:183-185
Publication Year :: 2001
Publisher :: Elsevier BV, 2001.
Abstract: InGaAs/GaAs multiple quantum well (MQW) photorefractive devices that have the sensitivity around the wavelength of 1.06 μm are fabricated and some characteristics are measured. Saturation intensity is 3.6 mW / cm 2 and cut off grating pitch is 1.4 μm . These values show that this device is usable in practical applications using Nd:YAG lasers. A vibration measurement system using two-wave mixing is also demonstrated.