Cite
Technology Positioning for mm Wave Applications: 130/90nm SiGe BiCMOS vs. 28nm RFCMOS
MLA
Randy Wolf, et al. “Technology Positioning for Mm Wave Applications: 130/90nm SiGe BiCMOS vs. 28nm RFCMOS.” 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), Oct. 2018. EBSCOhost, https://doi.org/10.1109/bcicts.2018.8551002.
APA
Randy Wolf, Vibhor Jain, Suh Fei Lim, Shih Ni Ong, Alvin J. Joseph, & Jagar Singh. (2018). Technology Positioning for mm Wave Applications: 130/90nm SiGe BiCMOS vs. 28nm RFCMOS. 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS). https://doi.org/10.1109/bcicts.2018.8551002
Chicago
Randy Wolf, Vibhor Jain, Suh Fei Lim, Shih Ni Ong, Alvin J. Joseph, and Jagar Singh. 2018. “Technology Positioning for Mm Wave Applications: 130/90nm SiGe BiCMOS vs. 28nm RFCMOS.” 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), October. doi:10.1109/bcicts.2018.8551002.