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Etching characteristics and application of physical-vapor-deposited amorphous carbon for multilevel resist

Authors :
Yongsup Park
H. T. Kim
Nae-Eung Lee
Byungyou Hong
B. S. Kwon
H. J. Cho
Source :
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 26:861-864
Publication Year :
2008
Publisher :
American Vacuum Society, 2008.

Abstract

For the fabrication of a multilevel resist (MLR) based on a very thin, physical-vapor-deposited (PVD) amorphous carbon (a-C) layer, the etching characteristics of the PVD a-C layer with a SiOx hard mask were investigated in a dual-frequency superimposed capacitively coupled plasma etcher by varying the following process parameters in O2∕N2∕Ar plasmas: high-frequency/low-frequency combination (fHF∕fLF), HF/LF power ratio (PHF∕PLF), and O2 and N2 flow rates. The very thin nature of the a-C layer helps to keep the aspect ratio of the etched features low. The etch rate of the PVD a-C layer increased with decreasing fHF∕fLF combination and increasing PLF and was initially increased but then decreased with increasing N2 flow rate in O2∕N2∕Ar plasmas. The application of a 30nm PVD a-C layer in the MLR structure of ArF PR∕BARC∕SiOx∕PVD a-C∕TEOS oxide supported the possibility of using a very thin PVD a-C layer as an etch-mask layer for the TEOS-oxide layer.

Details

ISSN :
15208559 and 07342101
Volume :
26
Database :
OpenAIRE
Journal :
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
Accession number :
edsair.doi...........3ace10a9f2e3f27c3581a4711eaf7ea7
Full Text :
https://doi.org/10.1116/1.2936231